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NTD4960N
Power MOSFET
30 V, 55 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Three Package Variations for Design Flexibility
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Recommended for High Side (Control)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
G
http://onsemi.com
R DS(ON) MAX
8.0 m W @ 10 V
12.7 m W @ 4.5 V
D
I D MAX
55 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
S
N ? CHANNEL MOSFET
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
V GS
I D
± 20
11.1
8.0
V
A
4
4
4
2 3
3
3
4
4
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
P D
ID
P D
I D
P D
I DM
1.68
8.9
6.4
1.07
55
40
35.71
137
W
A
W
A
W
A
1 2 1
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain          Drain
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T A = 25 ° C
I DmaxPkg
T J ,
T STG
I S
45
? 55 to
+175
29.7
A
° C
A
1
2
3
Source Gate Drain Source
1
2
3
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 32 A pk , L = 0.1 mH, R G = 25 W)
dV/dt
EAS
6
51.2
V/ns
mJ
2
1 Drain 3
Gate
Gate Drain Source
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y = Year
WW = Work Week
4960N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 ? Rev. 2
1
Publication Order Number:
NTD4960N/D
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